ci. c^ e.iis.i io aucti, one. 20 stern ave. springfield, new jersey 07081 u.s.a. switchmode series npn silicon power transistors these transistors are designed for high-voltage,high-speed, power switching in inductive circuits where fell time is cirtical. they are par- ticularly suited for line-operated switch mode applicacons.the mj16008 is a selected hihg-gain version of the mj 16006 for applications where drive current is limited typical applications: * switching regulators * inverters * solenoid and relay drives * motor controls * deflection circuits features: * fast turn-off times * operating temperature range - 65 to+200c * 100c performance specified for: reverse-biased soa with inductive loads switching times with inductive loads saturation voltages leakage currents maximum ratings telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 npn mj 16006 mj16008 8 ampere silicon power transistors 450 volts 150 watts to-3 characteristic collector-emitter voltage collector-emitter voltage emitter-base voltage collector current - continuous -peak base current-continuous -peak total power dissipation @tc=25c @tc=100c derate above 25c operating and storage junction temperature range symbol vceo vcev vebo 'c icm 'b ibm pd tj |tsto MJ16006 450 850 mj16008 450 850 6 8 16 6 12 150 85.5 0.86 -65 to +200 unit v v v a a w w/c c thermal characteristics characteristic thermal resistancejunction to case symbol rejc max 1.17 unit c/w _l ** j di_ j ^ v | b -r* i ^? ? s , ,? 1>- ii ! " h i -^,-2\ , > 1 ^ 'k a e pin 1.base 2.ehktter collector(case) dim a b c d e f g h i j k millimeters m!n 38.75 19.28 7.98 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.67 max 39.96 2223 9.28 12.19 26.67 1.09 1.62 30.40 17.30 4.36 11.18 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
MJ16006, mj16008 npn electrical characteristics ( tc = 25'c unless otherwise noted ) characteristic symbol min max unit off characteristics collector-emitter sustaining voltag?(1) ( lo- 100ma, i,- 0) collector cutoff current (vce= 850 v , ^bhaht 1 -5 v ) (v^ 850 v , vb^off)= 1 .5 v,tc= 100c ) collector cutoff current (vce- 850 v, rbe= 50 a ,tc= 100c ) emitter cutoff current (ve^e-ov, lc=0) vceo?-, icev icer MJ16006 (ic=5.0ajb=0.66a) MJ16006 (ic=3.0a,ib=0.3a) mj16008 (ic=5.0a,ib?0.5a) mj16008 base-emitter saturation voltage ( lc= 5.0 a, ib= 0.66 a ) MJ16006 (ic=5.0a,ib=0.5a) mj16008 hfe vce,-,, vbec?> 5,0 7.0 2.5 3.0 2.5 3.0 1.5 1.5 v v dynamic characteristics output capacitance ( vcb= 10v, ie= 0, f = 1.0 khz ) cob 350 pf switching characteristics delay time rise time storage time fall time vcc=250v, ic=5a rbe=4q pyy=30us duty cycle g 2% ig^^o.eea mj 16006 ib^-i^ 0.50a mj 16008 *d *r t? tf 100 250 2500 300 ns ns ns ns (1) pulse test: pulse width ^ 300 us, duty cycle s 2% figure -1 power derating i 1 125 | 50 i 25 \ x n n \0 25 50 75 100 125 150 175 2qo t0 . tempewurecc)
|
